Research on Typical Defect Electric Field and Temperature Characteristics of High Voltage Cable Terminal
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Abstract
During the installation of cable terminals, typical defects frequently occur due to construction practices. Defect types primarily include main insulation scratches, semiconductor tips, insulation layer impurities, and missing copper mesh. This study develops an electro-thermal coupled model to simulate and analyze the electric field and temperature profiles of terminals under typical defects. The results indicate that defects cause an increase in the electric field. Semiconductor tip defects increase the electric field strength by 6.72 times, causing the most serious electric field distortion. Main insulation scratches increase the electric field by 1.57 times, while insulation layer impurities increase it by 1.26 times. Additionally, missing copper mesh can also cause a slight increase in electric field strength. Simultaneously, defect size and location also influence the electric field strength field. More notably, the presence of defects will directly cause an increase in terminal temperature. The main insulation scratch caused a temperature increase of 1.94°C, the semiconductor tip caused a temperature increase of 1.6°C, the insulation layer impurity caused a temperature increase of 1°C, and the missing copper mesh caused a temperature increase of 8.7°C. When the ambient temperature rises, the defect temperature also increases accordingly.
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